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| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE FX50SMJ-2 OUTLINE DRAWING 15.9 max Dimensions in mm 4.5 1.5 4 2 2 4 20.0 3.2 5.0 19.5 min 4.4 G 0.6 2.8 1.0 1 2 3 5.45 5.45 4 3 * 4V DRIVE * VDSS ............................................................. -100V * rDS (ON) (MAX) ................................................ 50m * ID .................................................................... -50A * Integrated Fast Recovery Diode (TYP.) .........100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN TO-3P MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings -100 20 -50 -200 -50 -50 -200 150 -55 ~ +150 -55 ~ +150 Unit V V A A A A A W C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 4.8 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -100V, VGS = 0V ID = -1mA, VDS = -10V ID = -25A, VGS = -10V ID = -25A, VGS = -4V ID = -25A, VGS = -10V ID = -25A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 39 47 -0.98 49.2 11130 896 480 57 118 828 380 -1.0 -- 100 Max. -- 0.1 -0.1 -2.0 50 61 -1.25 -- -- -- -- -- -- -- -- -1.5 0.83 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -50V, ID = -25A, VGS = -10V, RGEN = RGS = 50 IS = -25A, VGS = 0V Channel to case IS = -50A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -3 -2 tw = 10s 200 -102 -7 -5 -3 -2 150 -101 -7 -5 -3 -2 TC = 25C Single Pulse 100s 1ms 10ms DC 100 50 -100 -7 -5 0 0 50 100 150 200 -3 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -100 VGS = -10V -8V -6V Tc = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V -4V -8V -6V -5V PD = 150W -3V DRAIN CURRENT ID (A) -80 DRAIN CURRENT ID (A) -5V -40 -60 -4V -30 -40 -3V -20 -20 PD = 150W -10 Tc = 25C Pulse Test 0 0 -2 -4 -6 -8 -10 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -10 Tc = 25C Pulse Test -8 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 80 -6 ID = -100A 60 VGS = -4V -4 -50A -25A 40 -10V Tc = 25C Pulse Test -2 20 0 -100 0 0 -2 -4 -6 -8 -10 -2 -3 -5 -7-101 -2 -3 -5 -7-102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) -100 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) -80 Tc = 25C VDS = -10V Pulse Test 3 2 -60 101 7 5 3 2 VDS = -10V Pulse Test -40 -20 0 0 -2 -4 -6 -8 -10 100 0 -10 -2 -3 -5 -7-101 -2 -3 -5 -7-102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 2 SWITCHING CHARACTERISTICS (TYPICAL) 104 103 td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 Tch = 25C VGS = 0V f = 1MHZ 7 5 3 Tch = 25C 2 VGS = -10V VDD = -50V 102 RGEN = RGS = 50 7 5 3 2 -7 -100 -2 -3 -5 -7 -101 -2 -3 -5 -7 tf 103 7 5 3 2 tr td(on) Coss Crss -3 -5 -7-100 -2 -3 -5 -7-101 -2 -3 -5 -7-102 -2 -3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -100 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 SOURCE CURRENT IS (A) -8 VDS = -20V -40V -80 TC = 25C -6 -60 75C 125C -4 -80V Tch = 25C ID = -50A -40 VGS = 0V Pulse Test -2 -20 0 0 40 80 120 160 200 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 VDS = -10V ID = -1mA -2.4 100 7 5 3 2 VGS = -10V ID = 1/2ID Pulse Test -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 1.2 100 D = 1.0 7 5 3 2 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.0 VGS = 0V ID = -1mA 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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